The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well.
Identifieur interne : 000990 ( Main/Exploration ); précédent : 000989; suivant : 000991The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well.
Auteurs : RBID : pubmed:23095253Abstract
Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-xInxNyAs1-y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.
DOI: 10.1186/1556-276X-7-586
PubMed: 23095253
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<author><name sortKey="Yesilgul, Unal" uniqKey="Yesilgul U">Unal Yesilgul</name>
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<author><name sortKey="Ungan, Fatih" uniqKey="Ungan F">Fatih Ungan</name>
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<author><name sortKey="Sakiro Lu, Serpil" uniqKey="Sakiro Lu S">Serpil Sakiroğlu</name>
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<author><name sortKey="Duque, Carlos" uniqKey="Duque C">Carlos Duque</name>
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<author><name sortKey="Mora Ramos, Miguel" uniqKey="Mora Ramos M">Miguel Mora-Ramos</name>
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<author><name sortKey="Kasapoglu, Esin" uniqKey="Kasapoglu E">Esin Kasapoglu</name>
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<author><name sortKey="Sari, Huseyin" uniqKey="Sari H">Huseyin Sari</name>
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<author><name sortKey="S Kmen, Ismail" uniqKey="S Kmen I">Ismail Sökmen</name>
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<front><div type="abstract" xml:lang="en">Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-xInxNyAs1-y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.</div>
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<Abstract><AbstractText>Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-xInxNyAs1-y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.</AbstractText>
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